Le 2016-07-28 22:38, RobertGlucose a écrit :
Ce clone d'Outrun a de la gueule : 80's OVERDRIVE

Endurance and data retention

Because they are written by forcing electrons through a layer of electrical insulation onto a floating transistor gate, rewriteable ROMs can withstand only a limited number of write and erase cycles before the insulation is permanently damaged. In the earliest EPROMs, this might occur after as few as 1,000 write cycles, while in modern Flash EEPROM the endurance may exceed 1,000,000. The limited endurance, as well as the higher cost per bit, means that Flash-based storage is unlikely to completely supplant magnetic disk drives in the near future.[citation needed]

The timespan over which a ROM remains accurately readable is not limited by write cycling. The data retention of EPROM, EAROM, EEPROM, and Flash may be time-limited by charge leaking from the floating gates of the memory cell transistors. Early generation EEPROM's, in the mid 1980's generally cited 5 or 6 year data retention. A review of EEPROM's offered in the year 2020 shows manufacturers citing 100 year data retention. Adverse environments will reduce the retention time (leakage is accelerated by high temperatures or radiation). Masked ROM and fuse/antifuse PROM do not suffer from this effect, as their data retention depends on physical rather than electrical permanence of the integrated circuit, although fuse re-growth was once a problem in some systems.[14]